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Fabrication and characterization of plasmonic nanostructures
Bačo, Ondřej ; Kvapil, Michal (referee) ; Dvořák, Petr (advisor)
This bachelor thesis deals with fabrication and characterization of plasmonic nanostructures. Graphene on a doped silicon substrate with a 285 nm thick layer of silicon dioxide was used for fabrication of these structures. Graphene ribbons with width in the order of hundreds of nanometers were prepared using electron beam lithography (EBL) and reactive ion etching (RIE). Steps in fabrication process were monitored utilizing optical and atomic force microscopy (AFM). Prepared graphene nanostructures were characterized with scanning electron microscope (SEM) and Fourier transform infrared spectrometer (FTIR).
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Optimization of deep reactive ion etching process
Houška, David ; Hrdý, Radim (referee) ; Prášek, Jan (advisor)
This bachelor thesis deals with optimization of cryogenic and Bosch deep reactive ion etching (DRIE) processes. The thesis describes characterization of silicon etching methods, the principle of DRIE and the influence of individual parameters on the resulting etch profile. Based on the analysis of fabricated samples using scanning electron microscopy (SEM), both processes were optimized to create narrow microstructures with diameters ranging from 1 to 16 µm with the highest achieved depth-to-width ratio of 28:1 on a silicon substrate. Furthermore, surface roughness was analyzed using atomic force microscopy (AFM) and the presence of fluorine residues by X-ray photoelectron spectroscopy (XPS) in structures etched by both processes.
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Fabrication of well defined nanoporous structures with application in membrane sensing
Fabianová, Kateřina ; Édes, Zoltán (referee) ; Sadílek, Jakub (advisor)
Theme of this bachelor thesis is focused on preparation of the metal nanomenhir structures situated in highly oriented matrix of silicon nitride nanopores based plasmonic biosensor. Porous structures were prepared by reactive ion etching of silicon nitride film using electron beam lithography prepared temporary mask as a template. Deposition of metals was handled by evaporation and magnetron sputtering and results was compared. Finally, this work assumes reached results including successful approach of sensor preparation without contamination of surrounding surface by heavy metal ions.
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Mechanical design of measurement system for reactive ion etching system
Maňka, Tadeáš ; Antoš, Martin (referee) ; Šerý, Mojmír (advisor)
The aim of this work is to design fully working measuring system for the reactive ion etching system (RIE). The Michelson interfometer, previously developed in Ústav přístrojové techniky, v.v.i., is used in this work. The theoretical part is aimed at description of interferometric methods for precise measuring of length. In next part the etching proces with RIE is described. In practical part the testing system was constructed from the parts of Thorlabs company . The functionality was controlled with this system and the results of measuring were compared with the profilometer. In next step technical drawings were created and the whole system was made.
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Microelectromechanical through-silicon vias
Dulák, Radovan ; Hrdý, Radim (referee) ; Prášek, Jan (advisor)
Through-hole silicon vias are key technology enabling 3D system integration and thus creating compact devices. These vertical microstructures interconnect multiple layers and are also used in integrated circuits and MEMS devices. This bachelor‘s thesis focuses on the possibility of preparing these microjunctions by wet anisotropic etching and dry anisotropic etching using the deep reactive ion etching (DRIE) process for use in MEMS. The work shows preparation, etching, plating and galvanic filling of these structures. Using optical and scanning electron microscope (SEM) images, experimental tests and subsequent optimization were performed and evaluated to create a hole with a minimum size of approximately 1 m using a wet etching process and 16 m by a dry etching process. The highest achieved aspect ratio on a wafer was 15:1. In addition, the created holes were plated, galvanically filled with conductive material and electrically tested and measured.
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Delayering of semiconductor chips
Valachovič, Marek ; Adámek, Martin (referee) ; Búran, Martin (advisor)
This work describes the individual layers of whitch the semiconductor chip is composed, the types of packages in witch it can be encapsulated and the methods of connecting the chip with the package. Furthermore, the methods of dacapsulating the encapsulated chip and delayering using several different methods, such as mechanical, chemical, plasmatic, or using an focused ion beam, are describe here. The methods of mechanical and chemical delayering of the layers of the semiconductor chip togeaher with dalayering by focused ion beam with the help of gas are practically performed and recorded.
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Optimization of deep reactive ion etching process
Houška, David ; Hrdý, Radim (referee) ; Prášek, Jan (advisor)
This bachelor thesis deals with optimization of cryogenic and Bosch deep reactive ion etching (DRIE) processes. The thesis describes characterization of silicon etching methods, the principle of DRIE and the influence of individual parameters on the resulting etch profile. Based on the analysis of fabricated samples using scanning electron microscopy (SEM), both processes were optimized to create narrow microstructures with diameters ranging from 1 to 16 µm with the highest achieved depth-to-width ratio of 28:1 on a silicon substrate. Furthermore, surface roughness was analyzed using atomic force microscopy (AFM) and the presence of fluorine residues by X-ray photoelectron spectroscopy (XPS) in structures etched by both processes.
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Morphological Structure Of Solar Cells Based On
Silicon And Gallium Arsenide After Ion Etching
Papež, Nikola
Study deals with the investigation of the surface after ion etching on two types of solar cells – based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.
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